Operational Transconductance Amplifier in 350nm CMOS technology

Authors

  • Dejan D. Mirković
  • Predrag M. Petković
  • Ilija Dimitrijević
  • Igor Mirčić

DOI:

https://doi.org/10.7251/ELS1519032M

Abstract

This paper presents transistor level design of
operational transconductance amplifier in CMOS technology.
Custom designed, circuit is to be built-in into the mixed-signal,
switched capacitor circuit. Amplifier targets relatively high slewrate
and moderate open loop gain with megahertz order gainbandwidth.
Adopted architecture is discussed appreciating
application in switched capacitor circuits. Circuit behavior is
examined through set of simulations. Obtained results confirmed
desired behavior. Target technology process is TSMC 350nm.

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Published

2015-07-22

Issue

Vol. 19 No. 1 (2015): Electronics, Volume 19, Number 1

Section

Чланци

License

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