Revisiting Analytical Models of N-Type Symmetric Double-Gate MOSFETs

Abstract

Nowadays, the endlessly increasing demand for
faster and complex integrated circuits (IC) has been fuelled by the
scaling of metal-oxide-semiconductor field-effect-transistors
(MOSFET) to smaller dimensions. The continued scaling of
MOSFETs approaches its physical limits due to short-channel
effects (SCE). Double-gate (DG) MOSFET is one of the promising
alternatives as it offers better immunity towards SCEs and can be
scaled to the shortest channel length. In future, ICs can be
designed using DG-CMOS technology for which mathematical
models depicting the electrical characteristics of the DG
MOSFETs are foremost needed. In this paper, a review on n-type
symmetric DG MOSFETs models has been presented based on the
analyses of electrostatic potential distribution, threshold voltage,
and drain-current models. Mathematical derivations of the device
models are described elaborately, and numerical simulations are
also carried out to validate the replicability of models.