Characteristics of Zn1-xAlxO NR/ITO Composite Films Oriented Application for Optoelectronic Devices

Authors

  • Nguyen Dinh Lam

DOI:

https://doi.org/10.7251/ELS2024043L

Abstract

The Zn1-xAlxO nanorod (NR) were grown on
ITO substrates by a hydrothermal process. The influences of the
Al doping concentration on the surface morphology, structural,
optical, and electrical characteristics of the Zn1-xAlxO NR/ITO
composite film were investigated in detail. The results indicated
that characteristics of the Zn1-xAlxO NR/ITO composite film were
strongly influenced by the Al doping concentration. Furthermore,
the lowest vertical resistance of the Zn1-xAlxO NR can be obtained
when x = 0.01 and it strongly reduces when the concentration
of UV light illumination increases. This reduction follows an
exponential decay with a decay rate of 4.35. This result shows good
photoconductivity response of the Zn1-xAlxO NR/ITO composite
film and its ability to apply for optoelectronic devices material.

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Published

2021-07-08

Issue

Vol. 24 No. 1 (2020): Electronics, Volume 24, Number 1

Section

Чланци

License

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