Sensitivity Analysis of the UTBSOI Transistor based Two-Stage Operational Amplifier

Abstract

In the nanoscale domain, the MOSFETs are prone to
various physical effects due to their shorter channel region known
as short-channel effects (SCE). The researchers have proposed
an advanced structure of MOSFET known as the ultrathinbody
silicon-on-insulator (UTBSOI) to overcome the limitations
of SCEs. The UTBSOI is a type of double-gate (DG) MOSFET
having superior controllability of gates over the shorter channel
region. Nowadays, the UTBSOI MOSFETs can be adopted in
the circuit simulators through the use of a device model named
BSIM-IMG. The BSIM-IMG has made it possible for the circuit
designers to simulate any UTBSOI based analog blocks like
operational amplifiers (opamp). The performance parameters
of an opamp are very much sensitive to any perturbation in
size (W/L) of the constituent MOSFETs, that may cause a
drastic change in the output. In this paper, the sensitivity analysis
procedure has been proposed for the CMOS and UTBSOI based
two-stage opamps as the function of perturbation in W/L. In
addition to this, an algorithm has also been presented to do
the same. From the simulation results, it is observed that the
sensitivity of the UTBSOI based opamp (UTBSOI-opamp) is
larger than that of CMOS based opamp (CMOS-opamp).