MAGNETORESISTIVE RANDOM ACCESS MEMORY

Slobodan Obradović, Borivoje Milošević, Nikola Davidović

Abstract


For decades, the memory hierarchy was determined based on latency, bandwidth, and cost between processors, random access memory (RAM), and secondary memory. Although the gap between the processor and RAM has been dampened by fast cache memory, the gap between RAM and secondary memory has remained challenging, expanding to 12 size range in 2015 and continuing to expand by around 50% per year. The rapid development of nanotechnology has triggered a new field in the organization of memory space. For more than a decade, FRAM - ferro random access memory has been in use, which keeps data in the form of a polarization of the ferroelectric crystal that does not lose polarization after the power is turned off. The real revolution is expected in the use of magnetic resonance random access memory (MRAM), which represents data storage technology using magnetic moments, not electric charges. Unlike conventional RAM chips, data in MRAM are not stored as an electrical charge, but with magnetic storage elements. The advantage of this memory is energy independence, that is, the storage of recorded data and the absence of power supply. MRAM has similar properties as SRAM, similar to the density of the record as dynamic RAM (DRAM), with much less consumption, and in relation to flash, it is much faster and with time does not degrade its performance. Theoretically, there is no limit to the number of read and write, so new memories could last unlimited. The paper will discuss this new type of memory organization.


Keywords


RAM; FRAM; SSD; FLASH; FeRAM; MRAM; STT-MTJs; TORQUE-SPIN

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References


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DOI: http://dx.doi.org/10.7251/cm.v2i8.4415

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