A new electrode structure of IrOx/Bi-doped SrRuO3 for highly reliable La-doped Pb (Zr, Ti)O3-based ferroelectric memories

Authors

  • Wensheng Wang Fujitsu Semiconductor Memory Solution Limited, Yokohama, Japan
  • Takashi Eshita Fujitsu Semiconductor Memory Solution Limited, Yokohama, Japan
  • Kazuaki Takai Fujitsu Semiconductor Memory Solution Limited, Yokohama, Japan
  • Ko Nakamura Fujitsu Semiconductor Memory Solution Limited, Yokohama, Japan
  • Mitsuaki Oikawa Fujitsu Semiconductor Memory Solution Limited, Yokohama, Japan
  • Nozomi Sato Fujitsu Semiconductor Memory Solution Limited, Yokohama, Japan
  • Soichiro Ozawa Fujitsu Semiconductor Memory Solution Limited, Yokohama, Japan
  • Kouichi Nagai Fujitsu Semiconductor Memory Solution Limited, Yokohama, Japan
  • Satoru Mihara Fujitsu Semiconductor Memory Solution Limited, Yokohama, Japan
  • Yukinobu Hikosaka Fujitsu Semiconductor Memory Solution Limited, Yokohama, Japan
  • Hitoshi Saito Fujitsu Semiconductor Memory Solution Limited, Yokohama, Japan
  • Manabu Kojima Fujitsu Semiconductor Memory Solution Limited, Yokohama, Japan
  • Kenji Nomura Fujitsu Limited, Fujitsu Limited
  • Hideshi Yamaguchi Fujitsu Limited, Fujitsu Limited

DOI:

https://doi.org/10.7251/IJEEC2401001W

Abstract

We successfully developed a lanthanum (La)-doped Pb (Zr,Ti)O3 (PLZT) based ferroelectric capacitor (FC) using a new electrode material of bismuth (Bi) doped SrRuO3 (B-SRO) aiming at reduction of energy consumption of ferroelectric random access memory (FeRAM) by suppressing the leakage current of its FC. Our employed B-SRO layer is effective for suppressing the leakage current due to reducing atomic interdiffusions of Iridium and lead between IrOx top electrode (TE) and PLZT. Space charge limited conduction (SCLC) is dominant in the leakage current of the FC with B-SRO, while defect assisted conduction possibly includes in the leakage current of FC without B-SRO in addition with the SCLC. Switchable polarization, depending on the B-SRO thickness, has largest value for 1.0-1.5 nm thick B-SRO. Excellent imprint and switching (fatigue) endurances is proven on the FC with 1 nm thick B-SRO.

Downloads

Published

2024-11-08

Issue

Vol. 8 No. 1 (2024): International Journal of Electrical Engineering and Computing

Section

Чланци